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APT150DL60B2 数据表(PDF) 4 Page - Microsemi Corporation

部件名 APT150DL60B2
功能描述  Ultrasoft Recovery Rectifi er Diode
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APT150DL60B2 数据表(HTML) 4 Page - Microsemi Corporation

  APT150DL60B2 Datasheet HTML 1Page - Microsemi Corporation APT150DL60B2 Datasheet HTML 2Page - Microsemi Corporation APT150DL60B2 Datasheet HTML 3Page - Microsemi Corporation APT150DL60B2 Datasheet HTML 4Page - Microsemi Corporation  
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APT150DL60B2(G)
4
3
1
2
5
5
Zero
1
2
3
4
di
F/dt - Rate of Diode Current Change Through Zero Crossing.
I
F - Forward Conduction Current
I
RRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 9. Diode Test Circuit
Figure 10, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
CURRENT
TRANSFORMER
di
F/dt Adjust
D.U.T.
+18V
0V
trr/Qrr
Waveform
Slope = diM/dt
6
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
6
Vr
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
T-MAX® [B2] Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
10.90 (.430) BSC
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
Anode
Cathode



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