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APTGF200DA120D3G 数据表(PDF) 4 Page - Microsemi Corporation

部件名 APTGF200DA120D3G
功能描述  Boost chopper NPT IGBT Power Module
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTGF200DA120D3G 数据表(HTML) 4 Page - Microsemi Corporation

  APTGF200DA120D3G Datasheet HTML 1Page - Microsemi Corporation APTGF200DA120D3G Datasheet HTML 2Page - Microsemi Corporation APTGF200DA120D3G Datasheet HTML 3Page - Microsemi Corporation APTGF200DA120D3G Datasheet HTML 4Page - Microsemi Corporation APTGF200DA120D3G Datasheet HTML 5Page - Microsemi Corporation  
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APTGF200DA120D3G
www.microsemi.com
4- 5
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
100
200
300
400
01
23
45
6
VCE (V)
Output Characteristics
VGE=15V
VGE=12V
VGE=20V
VGE=9V
0
100
200
300
400
01
2
3
4
5
6
VCE (V)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
0
100
200
300
400
5
6789
10
11
12
VGE (V)
Energy losses vs Collector Current
Eon
Eoff
Err
0
10
20
30
40
50
60
0
100
200
300
400
IC (A)
VCE = 600V
VGE = 15V
RG = 4.7 Ω
TJ = 125°C
Eon
Eoff
Err
0
20
40
60
80
100
0
5
10
15
20
25
30
35
Gate Resistance (ohms)
VCE = 600V
VGE =15V
IC = 200A
TJ = 125°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
100
200
300
400
500
0
300
600
900
1200
1500
VCE (V)
VGE=15V
TJ=125°C
RG=4.7 Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
IGBT



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