BUT11AF datasheet(1/1 Pages) WINGS

部件名	BUT11AF

功能描述	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

PDF	1 Pages

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制造商	WINGS [Wing Shing Computer Components]

网页	http://www.wingshing.com/en

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GENERAL DESCRIPTION

Highvoltage,high-speed switching npn transistors in a

metal envelope ,primarily for use in switching power

circuits.

QUICK REFERENCE DATA

LIMITING VALUES

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0V

1000

V

CEO

Collector-emitter voltage (open base)

450

V

I

C

Collector current (DC)

5

A

I

CM

Collector current peak value

10

A

P

tot

Total power dissipation

T

mb

25

40

W

V

CEsat

Collector-emitter saturation voltage

I

C = 2.5A; IB = 0.5A

1.5

V

I

csat

Collector saturation current

f = 16KHz

A

V

F

Diode forward voltage

V

t

f

Fall time

I

C=2.5A,IB1=-IB2=0.5A,VCC=150V

1.0

s

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0V

1000

V

CEO

Collector-emitter voltage (open base)

450

V

EBO

Emitter-base voltage(open collector)

5

V

I

C

Collector current (DC)

5

A

I

B

Base current (DC)

2

A

I

BM

Base current peak value

4

A

P

tot

Total power dissipation

Tmb

25

40

W

T

stg

Storage temperature

-55

150

T

j

Junction temperature

150

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

I

CE

Collector-emitter cut-off current

V

BE = 0V; VCE = VCESMmax

1.0

mA

I

CES

V

BE = 0V; VCE = VCESMmax

2.0

mA

T

j = 125

V

CEOsust

Collector-emitter sustaining voltage

I

B = 0A; IC = 100mA

V

L = 25mH

V

CEsat

Collector-emitter saturation voltages

I

C = 2.5A; IB = 0.5A

1.5

V

BEsat

Base-emitter satuation voltage

I

C = 2.5A; IB = 0.5A

1.5

V

h

FE

DC current gain

I

C = 0.5A; VCE = 5V

10

50

V

F

Diode forward voltage

V

f

T

Transition frequency at f = 1MHz

I

C = 0.1A; VCE = 10V

5

MHz

C

c

Collector capacitance at f = 1MHz

V

CB = 10V

pF

t

s

Switching times(16KHz line deflecton circuit)

I

C=2.5A,IB1=-IB2=0.5A,VCC=150V

5.0

s

t

f

Turn-off storage time Turn-off fall time

IC=2.5A,IB1=-IB2=0.5A,VCC=150V

1.0

s

ELECTRICAL CHARACTERISTICS

TO-220F

Wing Shing Computer Components Co., (H.K.)Ltd.

Tel:(852)2341 9276

Fax:(852)2797 8153

Homepage: http://www.wingshing.com

E-mail:

wsccltd@hkstar.com

BUT11AF

SILICON DIFFUSED POWER TRANSISTOR

类似零件编号 - BUT11AF

制造商	部件名	数据表	功能描述
Motorola, Inc	BUT11AF	120Kb / 6P	POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS
NXP Semiconductors	BUT11AF	116Kb / 8P	Silicon Diffused Power Transistor August 1997 Rev 1.000
Fairchild Semiconductor	BUT11AF	47Kb / 4P	High Voltage Power Switching Applications
Inchange Semiconductor ...	BUT11AF	128Kb / 3P	isc Silicon NPN Power Transistor
Savantic, Inc.	BUT11AF	116Kb / 3P	Silicon NPN Power Transistors

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