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APTGL475DA120D3G 数据表(PDF) 4 Page - Microsemi Corporation |
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APTGL475DA120D3G 数据表(HTML) 4 Page - Microsemi Corporation |
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4 / 5 page ![]() APTGL475DA120D3G www.microsemi.com 4- 5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=150°C 0 200 400 600 800 01 2 3 4 VCE (V) Output Characteristics VGE=15V VGE=19V VGE=9V 0 200 400 600 800 01 234 VCE (V) TJ = 150°C Transfert Characteristics TJ=25°C TJ=150°C 0 200 400 600 800 5 6 7 8 9 10 11 12 13 VGE (V) Energy losses vs Collector Current Eon Eoff Err 0 20 40 60 80 0 200 400 600 800 IC (A) VCE = 600V VGE = 15V RG = 1.Ω TJ = 150°C Eon Eoff Err 0 30 60 90 120 150 180 02.5 57.5 10 Gate Resistance (ohms) VCE = 600V VGE =15V IC = 400A TJ = 150°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 0 160 320 480 640 800 960 0 300 600 900 1200 1500 VCE (V) VGE=15V TJ=150°C RG=1.Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.02 0.04 0.06 0.08 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) IGBT |
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