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APTM50DAM19G 数据表(PDF) 6 Page - Microsemi Corporation |
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APTM50DAM19G 数据表(HTML) 6 Page - Microsemi Corporation |
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6 / 6 page ![]() APTM50DAM19G www.microsemi.com 6 – 6 Delay Times vs Current td(on) td(off) 0 20 40 60 80 100 20 60 100 140 180 220 260 ID, Drain Current (A) VDS=333V RG=1Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 0 20 40 60 80 100 120 20 60 100 140 180 220 260 ID, Drain Current (A) VDS=333V RG=1Ω TJ=125°C L=100µH Hard switching ZCS ZVS 0 50 100 150 200 250 300 350 400 0 20 40 60 80 100 120 140 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=333V D=50% RG=1Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Source to Drain Diode Forward Voltage Switching Energy vs Current Eon Eoff 0 2 4 6 8 10 20 60 100 140 180 220 260 ID, Drain Current (A) VDS=333V RG=1Ω TJ=125°C L=100µH Eon Eoff Eoff 0 2 4 6 8 10 12 14 16 02.557.5 10 12.5 Gate Resistance (Ohms) Switching Energy vs Gate Resistance VDS=333V ID=163A TJ=125°C L=100µH Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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