APTM120DA30T1G datasheet(1/5 Pages) MICROSEMI

部件名	APTM120DA30T1G

功能描述	Boost chopper MOSFET Power Module

PDF	5 Pages

Scroll/Zoom	100%

制造商	MICROSEMI [Microsemi Corporation]

网页	http://www.microsemi.com

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1 / 5 page

APTM120DA30T1G

www.microsemi.com

1 – 5

11

CR1

Q2

10

9

12

NTC

12

3

4

6

5

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

VDSS

Drain - Source Breakdown Voltage

1200

V

Tc = 25°C

31

ID

Continuous Drain Current

Tc = 80°C

23

IDM

Pulsed Drain current

195

A

VGS

Gate - Source Voltage

±30

V

RDSon

Drain - Source ON Resistance

360

m

Ω

PD

Maximum Power Dissipation

Tc = 25°C

657

W

IAR

Avalanche current (repetitive and non repetitive)

25

A

Application

•

AC and DC motor control

•

Switched Mode Power Supplies

•

Power Factor Correction

Features

•

Power MOS 8™ MOSFETs

-

Low RDSon

-

Low input and Miller capacitance

-

Low gate charge

-

Avalanche energy rated

-

Very rugged

•

Very low stray inductance

•

Internal thermistor for temperature monitoring

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

•

RoHS Compliant

Boost chopper

MOSFET Power Module

VDSS = 1200V

RDSon = 300mΩ typ @ Tj = 25°C

ID = 31A @ Tc = 25°C

类似零件编号 - APTM120DA30T1G

制造商	部件名	数据表	功能描述
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