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APTM120DA68T1G 数据表(PDF) 2 Page - Microsemi Corporation |
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APTM120DA68T1G 数据表(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page ![]() APTM120DA68T1G www.microsemi.com 2 – 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VDS =1200V VGS = 0V Tj = 125°C 500 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 12A 680 816 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 4 5 V IGSS Gate – Source Leakage Current VGS = ±30 V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 6696 Coss Output Capacitance 615 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 80 pF Qg Total gate Charge 260 Qgs Gate – Source Charge 42 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 12A 120 nC Td(on) Turn-on Delay Time 45 Tr Rise Time 27 Td(off) Turn-off Delay Time 145 Tf Fall Time Resistive switching @ 25°C VGS = 15V VBus = 800V ID = 12A RG = 2.2Ω 42 ns Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 100 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA IF DC Forward Current Tc = 80°C 30 A IF = 30A 2.6 3.1 IF = 60A 3.2 VF Diode Forward Voltage IF = 30A Tj = 125°C 1.8 V Tj = 25°C 300 trr Reverse Recovery Time Tj = 125°C 380 ns Tj = 25°C 360 Qrr Reverse Recovery Charge IF = 30A VR = 800V di/dt =200A/µs Tj = 125°C 1700 nC Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.35 RthJC Junction to Case Thermal Resistance Diode 1.2 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 °C Torque Mounting torque To heatsink M4 2.5 4.7 N.m Wt Package Weight 80 g |
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