ARF521 datasheet(1/4 Pages) MICROSEMI

部件名	ARF521

功能描述	RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

PDF	4 Pages

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制造商	MICROSEMI [Microsemi Corporation]

网页	http://www.microsemi.com

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ARF521

165V, 150W, 150MHz

The ARF521 is an RF power transistor designed for high voltage operation in

broadband HF, narrow band ISM and MRI power ampliﬁers up to 150MHz.

• Speciﬁed 125 Volt, 81MHz Characteristics:

Output Power = 150 Watts.

Gain = 13dB (Class AB)

Efﬁciency = 50%

• High Voltage Breakdown and Large SOA

for Superior Ruggedness.

• Industry Standard Package

• Low Vth Thermal Coefﬁcient

Symbol

Parameter

ARF521

Unit

V

DSS

Drain-Source Voltage

500

V

I

D

Continuous Drain Current @ T

C = 25°C

10

A

V

GS

Gate-Source Voltage

±30

V

P

D

Total Device Dissipation @ T

C = 25°C

250

W

T

J, TSTG

Operating and Storage Junction Temperature Range

-55 to 175

°C

T

L

Lead Temperature: 0.063” from Case for 10 Sec.

300

Maximum Ratings

All Ratings: T

C =25°C unless otherwise speciﬁed

Static Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

V

(BR)DSS

Drain-Source Breakdown Voltage (V

GS = 0V, ID = 250 μA)

500

V

DS(ON)

Drain-Source On-State Resistance 1 (I

D(ON) = 5A, VGS = 10V)

0.56

0.8

Ω

I

DSS

Zero Gate Voltage Drain Current (V

DS = VDSS, VGS = 0V)

25

μA

Zero Gate Voltage Drain Current (V

DS = 50V, VGS = 0, TC = 125°C)

250

I

GSS

Gate-Source Leakage Current (V

DS = ±30V, VDS = 0V)

±100

nA

g

fs

Forward Transconductance (V

DS = 15V, ID = 5A)

3

3.6

mhos

V

GS(TH)

Gate Threshold Voltage (V

DS = VGS, ID = 200mA)

2

4

Volts

Microsemi Website - http://www.microsemi.com

Thermal Characteristics

Symbol

Characteristic

Min

Typ

Max

Unit

R

θJC

Junction to Case Thermal Resistance

0.60

°C/W

R

θCS

Case to Sink (Use High Efﬁciency Thermal Joint Compound and Planar Heat Sink Surface.)

0.1

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

RF POWER MOSFET

N-CHANNEL ENHANCEMENT MODE

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