DRF100

Output Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

C

out

Output Capacitance

2500

pF

R

out

Output Resistance

1

Ω

L

out

Output Inductance

2

3

4

nH

F

MAX

Operating Frequency CL=3000nF + 50Ω

30

MHz

F

MAX

Operating Frequency RL=50Ω

50

Dynamic Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

C

iss

Input Capacitance

2000

pF

C

oss

Output Capacitance

165

C

rss

Reverse Transfer Capacitance

75

Thermal Characteristics

Symbol

Parameter

Ratings

Unit

Thermal Resistance Junction to Case

1.44

°C/W

Thermal Resistance Junction to Heat Sink

2.53

T

JSTG

Storage Temperature

-55 to 150

°C

P

D

Maximum Power Dissipation @ T

60

W

P

DC

Total Power Dissipation @ T

100

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Figure 1, DRF100 Simplified Circuit Diagram

The Simplified DRF100 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C Internal), the contribution

to the internal parasitic loop inductance of the driver output is greatly reduced. This low parasitic approach, coupled with the Schmitt trig-

ger input (pin 4), Kelvin signal ground (pin 5) and the Anti-Ring Function, provide improved stability and control. The IN pin (4) is applied to

a Schmitt Trigger. The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary circuitry designed

specifically for ring abatement. The P channel and N channel power drivers provide the high current to the OUTPUT (pin 9.)