GC4510 – GC4533

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 2

CONTROL DEVICES

High Voltage NIP Diodes

TM

®

Copyright

 2006

Rev.: 2009-01-19

RoHS Compliant

Notes:

1. Capacitance is measured at 1 MHz and -50 VOLTS

2. Resistance is measured using transmission loss techniques.

3. These devices are not available in all the package styles. Please consult the factory for specific case styles offered.

DEVICE NOTES

The tabulated specifications above are for package style 00. Diodes are also

available in various packaged configurations. Some limitations apply.

Consult factory for details.

Each type offers trade offs in series resistance, junction capacitance, carrier

lifetime and breakdown voltage; the proper choice of which depends on the

end application. Standard polarity diodes (PIN) and faster speed PIN and

NIP diodes are also available. (See data sheets for GC4400, GC4200, and

GC4300 series respectively.)

Model Number

(Min)

1

(Max)

2

@100 mA

(Max)

(Typ)

Thermal

Resistance

θ (˚C/W)

(Max)

GC4510 – 00

100

0.1

1.0

0.1

40

GC4511 – 00

100

0.25

0.6

0.2

25

GC4512 – 00

100

0.5

0.5

0.3

20

GC4513 – 00

3

100

0.75

0.4

0.4

10

GC4530 – 00

300

0.1

1.5

0.3

50

GC4531 – 00

300

0.25

1.2

0.5

30

GC4532 – 00

300

0.5

1.0

0.75

20

GC4533 - 00

3

300

0.75

0.8

1.0

15