GC4701 - GC4750

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 1

CONTROL DEVICES – LIMITER DIODES

TM

®

Copyright

 2006

Rev: 2009-01-19

RoHS Compliant

0B

DESCRIPTION

The GC4700 series diodes are specially processed PIN diodes designed

for use in passive or active limiters at frequencies through Ku band.

Thirteen categories of devices are offered for flexibility in design of low,

medium and high power limiters.

Low VB limiters have thinner I regions for faster turn-on time and better

flat leakage. Microsemi also manufactures “gold doped” limiters for fastest

turn on time. In addition, we manufacture high voltage dual junction

limiters for superior peak and CW power handling.

This series of diodes meets RoHS requirements per EU Directive

2002/95/EC.

APPLICATIONS

A diode limiter is a power-sensitive variable attenuator that uses the non-linear

properties of the diode to provide an impedance mismatch when sufficient amounts

of RF power are incident on the device. The output power is reduced to a level that

will not overdrive a receiver, burn out a mixer, etc. For varying input power levels in

excess of the diode’s threshold level, the limiter’s output power tends to remain

constant.

A passive limiter is one in which the limiter diodes are “turned on” by the RF signal

itself. An active limiter is one in which the limiter diodes are “turned on” primarily by

an external bias current typically supplied by a Schottky detector diode which

senses the incident signal.

Since limiter diodes are not designed to dissipate large amounts of power, the

limiter must reflect or divert the excess incident power back to the source or to

another load (i.e. via a circulator, hybrid coupler, etc.).

Limiter diodes may be used in wave guides, coax, microstrip, stripline or other

media. Single or cascaded devices may be used, depending on power levels.

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

Maximum Leakage Current

@80% of minimum Rated Vb

Ir

0.5

uA

Operating Temperature

T op

-55 to +150

ºC

Storage Temperature

T stg

-65 to +150

ºC

HU

www.MICROSEMI.com

U

Specifications are subject to change, consult the factory for further information.

These devices are ESD sensitive and must be handled using ESD precautions.

KEY FEATURES



Available as packaged devices or

as chips for hybrid applications



Low Loss



Suitable for applications to

18Ghz



Excellent flat leakage

performance



Low 1 dB compression point



Gold Doped Diodes for Fast Turn

On



RoHS Compliant

1

Gold plated terminations. Other

terminal finishes are available on

request. Consult factory for details.

APPLICATIONS/BENEFITS



Receiver protection circuits



Amplifier Protection