MP61001 – MP61012

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 1

GaAs PIN DIODES

TM

®

Copyright

 2008

Rev: 2009-05-11

Reverse Voltage

Breakdown Voltage

Forward Current

50 mA @ 25°C

Incident Power

+20 dBm @ 25°C

Operating Temperature

-55°C to +175°C

Storage Temperature

-55°C to +200°C

Packaged and Bondable Chips

Features

●

Low Series Resistance

●

Fast Switching Speed

●

Low Capacitance

●

No Reverse Bias Required

●

Available in Packages and Bondable Chips

●

Available as Chip-on-Board Components

Applications

●

Switches

●

Attenuators

●

Phase Shifters

Maximum Ratings

Description

Microsemi’s

GaAs PIN diodes

are fabricated

utilizing a gold contact mesa and protected with

silicon nitride. The diodes have short carrier lifetime

for fast switching speed and low series resistance.

GaAs

P00

diodes

are

available

as bondable

chips, chip-on-board components and in a variety

of packages.

GaAs PIN diodes, in comparison to Si PIN diodes,

reach its high impedance state at zero bias and do

not require reverse bias for low loss. Nanosecond

switching speed is achieved with GaAs PIN diodes,

using low-cost TTL drivers.