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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

1.5V Drive Pch MOSFET

RZL035P01

Structure

Dimensions (Unit : mm)

Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

Application

Switching

Packaging specifications

Package

Code

Taping

Basic ordering unit (pieces)

RZL035P01

TR

3000

Type

Absolute maximum ratings (Ta=25

°C)

Inner circuit

∗1

∗1

∗2

Parameter

V

Symbol

−12

V

±10

A

±3.5

A

±14

A

−0.8

A

−14

W

1.0

°C

Tch

150

°C

Tstg

−55 to +150

Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Range of Storage temperature

Continuous

Pulsed

Continuous

Pulsed

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Source current

(Body diode)

Thermal resistance

°C / W

Rth (ch-a)

125

Parameter

Symbol

Limits

Unit

Channel to ambient

∗ When mounted on a ceramic board.

∗

TUMT6

Abbreviated symbol : YB

(1) Drain

(2) Drain

(3) Gate

(4) Source

(5) Drain

(6) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗2

∗1

(6)

(1)

(5)

(2)

(4)

(3)