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VRF151 数据表(PDF) 1 Page - Microsemi Corporation |
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VRF151 数据表(HTML) 1 Page - Microsemi Corporation |
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1 / 4 page ![]() VRF151 50V, 150W, 175MHz The VRF151 is a gold-metallized silicon n-channel RF power transistor de- signed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES • Improved Ruggedness V (BR)DSS = 170V • 150W with 22dB Typical Gain @ 30MHz, 50V • 150W with 14dB Typical Gain @ 175MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • 30:1 Load VSWR Capability at Specified Operating Conditions • Nitride Passivated • Refractory Gold Metallization • High Voltage Replacement for MRF151 • RoHS Compliant Symbol Parameter VRF151 Unit V DSS Drain-Source Voltage 170 V I D Continuous Drain Current @ T C = 25°C 16 A V GS Gate-Source Voltage ±40 V P D Total Device dissipation @ T C = 25°C 300 W T STG Storage Temperature Range -65 to 150 °C T J Operating Junction Temperature 200 RF POWER VERTICAL MOSFET Maximum Ratings All Ratings: T C =25°C unless otherwise specified Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V (BR)DSS Drain-Source Breakdown Voltage (V GS = 0V, ID = 100mA) 170 180 V V DS(ON) On State Drain Voltage (I D(ON) = 10A, VGS = 10V) 2.0 3.0 I DSS Zero Gate Voltage Drain Current (V DS = 100V, VGS = 0V) 1 mA I GSS Gate-Source Leakage Current (V DS = ±20V, VDS = 0V) 1.0 μA g fs Forward Transconductance (V DS = 10V, ID = 5A) 5.0 mhos V GS(TH) Gate Threshold Voltage (V DS = 10V, ID = 100mA) 2.9 3.6 4.4 V Microsemi Website - http://www.microsemi.com Thermal Characteristics Symbol Characteristic Min Typ Max Unit R θJC Junction to Case Thermal Resistance 0.60 °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. M174 |
类似零件编号 - VRF151 |
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类似说明 - VRF151 |
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