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VRF151G 数据表(PDF) 3 Page - Microsemi Corporation

部件名 VRF151G
功能描述  RF POWER VERTICAL MOSFET
PDF  4 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

VRF151G 数据表(HTML) 3 Page - Microsemi Corporation

  VRF151G Datasheet HTML 1Page - Microsemi Corporation VRF151G Datasheet HTML 2Page - Microsemi Corporation VRF151G Datasheet HTML 3Page - Microsemi Corporation VRF151G Datasheet HTML 4Page - Microsemi Corporation  
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0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
10-5
10-4
10-3
10-2
10
1.0
-1
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
Note:
t1 = Pulse Duration
RECTANGULAR PULSE DURATION (seconds)
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
0
50
100
150
200
250
300
350
400
0
2
4
6
8
10
INPUT POWER (WATTS PEP)
Figure 6. P
OUT versus PIN
Typical Performance Curves
Vdd=50V, Idq = 250mA,
Freq=150MHz
150MHz
VRF151G
175MHz
200MHz



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