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FPD33684 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 FPD33684
功能描述  Low Power, Low EMI, TFT-LCD Column Driver with RSDS??Inputs, 64 Grayshades, and 384 Outputs for XGA/SXGA Applications
PDF  15 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

FPD33684 数据表(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 2)
Analog Supply, (V
DD2) (Note 3)
−0.3V to +11.5V
Logic Supply, (V
DD1) (Note 3)
−0.3V to +5.0V
High Bias Supply, (V
HBIAS) (Note 3)
−0.3V to +13.0V
Low-Polarity RDAC Reference
Voltages, (V
GMA6 to VGMA10)
(Note 3)
−0.3V to 0.5V
DD2
High-Polarity RDAC Reference
Voltages, (V
GMA1 to VGMA5)
(Note 3)
0.5V
DD2 − 1.0V to
V
DD2 + 0.3V
RDAC Current (All Gamma Voltage
Taps), (I
GMA to IGMA10)
−2.5mA to 2.5mA
Input Voltage (Digital Logic), (V
IN)
(Note 3)
−0.3V to V
DD1 + 0.3V
Output Voltage, (V
OUT) (Note 3)
−0.3V to V
DD2 + 0.3V
Output Current (Analog), (I
OUT)
−7mA to +7mA
Storage Temperature Range, (T
S)
−55˚C to +125˚C
Note 2: “Absolute Maximum Ratings” are those values beyond which the
safety of the device cannot be guaranteed. They are not meant to imply that
the devices should be operated at these limits. The table of “Electrical
Characteristics” specifies conditions of device operation.
Note 3: Absolute voltages referenced to VSS1 =VSS2 = 0.0V.
Recommended Operating
Conditions
Min
Typ
Max
Units
Logic Supply Voltage
(V
DD1)
2.7
3.3
3.6
V
Supply Voltage (V
DD2)
7.5
10.5
V
Supply Voltage (V
HBIAS)VDD2
V
DD2+1.5
V
Operating Temperature
(T
A)
−10
+25
+70
˚C
DC Electrical Characteristics
Digital Electrical Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
IH
Logic Input High Voltage
0.7
V
DD1
V
V
IL
Logic Input Low Voltage
0.3
V
DD1
V
V
OH
Logic Output High Voltage
I
OH = −0.5mA
V
DD1
0.5
V
V
OL
Logic Output Low Voltage
I
OL = 0.5mA
0.5
V
I
DD1
Logic Current
(Note 4)
3.0
8.0
mA
I
IH
Input Leakage
V
DD1 = 3.6V, VIN = 3.6V
-1
1
µA
I
IL
Input Leakage
V
DD1 = 3.6V, VIN =0V
-1
1
µA
C
IN
Input Capacitance
All logic pins
2
pF
Note 4: CLK frequency = 32.5 MHz, VDD1 = 3.3V, VSS1 =VSS2 = 0.0V, charge share time = 1.5µs, line time = 22µs.
RSDS Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VIH
RSDS
RSDSHigh Input Voltage
VCM
RSDS = 1.2V (Note 5) see
Figure 1
100
200
mV
VIL
RSDS
RSDSLow Input Voltage
VCM
RSDS = 1.2V (Note 5) see
Figure 1
−200
−100
mV
VCM
RSDS
RSDSCommon Mode Input
Voltage Range
VIH
RSDS = +100mV, VILRSDS =
−100mV (Note 6) see Figure 1
V
SS1 +
0.1
V
DD1
1.3
V
IDL
RSDSInput Leakage Current
DxxP, DxxN, CLKP, CLKN
−10
10
µA
Note 5: VCMRSDS = (VCLKP + VCLKN)/2 or (VDxxP + VDxxN)/2.
Note 6: Positive means that DxxP (or CLKP) is higher than RSDS ground DxxN (or CLKN). Negative means that DxxP (or CLKP) is lower than RSDS ground DxxN
(or CLKN).
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