2SC2712 datasheet(1/2 Pages) RECTRON

部件名	2SC2712

功能描述	SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

PDF	2 Pages

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制造商	RECTRON [Rectron Semiconductor]

网页	http://www.rectron.com

标志

1 / 2 page

RECTRON

SEMICONDUCTOR

FEATURES

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

* Weight: 0.008 gram

SOT-23

2SC2712

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

OC ambient temperature unless otherwise specified.

0.118(3.00)

0.012(0.30)

0.020(0.50)

0.003(0.08)

0.006(0.15)

0.110(2.80)

0.019(2.00)

0.071(1.80)

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.043(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

TECHNICAL SPECIFICATION

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(PNP)

2006-3

ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )

Emitter cut-off current (VEB= 5V, IC=0)

DC current gain (VCE= 6V, IC= 2mA)

Collector cut-off current (VCB= 60V, IE=0)

Collector-emitter saturation voltage (IC= 100mA, IB= 10mA)

Transition frequency (VCE= 10V, IC= 1mA)

Output capacitance (VCB= 10V, IE= 0, f= 1MHZ)

Noise figure (VCE= 6V, IC= 0.1mA, f= 1KHZ, Rg= 10KW)

CHARACTERISTICS

SYMBOL

UNITS

-

0.1

2.0

1.0

700

m

A

m

A

V

pF

MHz

dB

Collector-base breakdown voltage (IC= 100mA, IE=0)

Collector-emitter breakdown voltage (IC= 1mA, IB=0)

Emitter-base breakdown voltage (IE= 100mA, IC=0)

CLASSIFICATION OF hFE

RANK

Range

Marking

O

70-140

120-240

LO

LY

V(BR)CBO

V(BR)CEO

V(BR)EBO

IEBO

hFE

ICBO

VCE(sat)

fT

Cob

NF

TYP

MAX

60

50

5

-

3.5

10

-

80

-

70

MIN

BL

Y

200-400

LG

GR

350-700

LL

0.055(1.40)

0.047(1.20)

-

0.1

-

0.25

BASE

EMITTER

COLLECTOR

*

Power dissipation

PCM :

150

mW(Tamb=25OC)

Collector current

ICM :

150

mA

Collector-base voltage

V(BR)CBO :

60

V

Operating and storage junction temperature range

TJ,Tstg: -55OC to +150OC

1

2

3

2

3

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

类似零件编号 - 2SC2712

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SC2712	210Kb / 3P	TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS)
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Toshiba Semiconductor	2SC2712	624Kb / 5P	Silicon NPN Epitaxial Type (PCT process)
Galaxy Semi-Conductor H...	2SC2712	173Kb / 4P	Silicon Epitaxial Planar Transistor Rev.A

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