DF152S datasheet(1/3 Pages) WTE

部件名	DF152S

功能描述	1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

PDF	3 Pages

Scroll/Zoom	100%

制造商	WTE [Won-Top Electronics]

网页	http://www.wontop.com

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1 / 3 page

DF150S – DF1510S

1 of 3

DF150S – DF1510S

1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

Features

!

Glass Passivated Die Construction

G

!

Low Forward Voltage Drop

!

High Current Capability

!

High Surge Current Capability

-

+

!

Designed for Surface Mount Application

B

~

A

D

E

!

Plastic Material – UL Recognition Flammability

Classification 94V-O

C

L

H

Mechanical Data

J

!

Case: Molded Plastic

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

K

!

Polarity: As Marked on Case

!

Weight: 0.38 grams (approx.)

*Low profile models (J = 2.20~2.50mm) are available.

!

Mounting Position: Any

Please consult factory.

!

Marking: Type Number

Maximum Ratings and Electrical Characteristics @T

A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

DF

150S

DF

151S

DF

152S

DF

154S

DF

156S

DF

158S

DF

1510S

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

50

100

200

400

600

800

1000

V

RMS Reverse Voltage

VR(RMS)

35

70

140

280

420

560

700

V

Average Rectified Output Current

@TA = 40°C

IO

1.5

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

IFSM

50

A

Forward Voltage per element

@IF = 1.5A

VFM

1.1

V

Peak Reverse Current

@TA = 25°C

At Rated DC Blocking Voltage

@TA = 125°C

IRM

10

500

µA

Typical Junction Capacitance per element (Note 1)

Cj

25

pF

Typical Thermal Resistance (Note 2)

RJA

74

K/W

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

°C

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to ambient mounted on PC board with 5.0mm2 (0.03mm thick) land areas.

WTE

POWER SEMICONDUCTORS

DF-S

Dim

Min

Max

A

7.40

7.90

B

6.20

6.50

C

0.009

0.25

D

0.076

0.33

E

—

10.40

G

1.02

1.53

H

8.13

8.51

J*

3.20

3.40

K

5.0

5.20

L

1.00

1.20

All Dimensions in mm

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