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BFS20 数据表(PDF) 1 Page - Rectron Semiconductor |
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BFS20 数据表(HTML) 1 Page - Rectron Semiconductor |
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1 / 2 page ![]() RECTRON SEMICONDUCTOR FEATURES MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram SOT-23 BFS20 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. Single phase , half wave, 60HZ, resistive or inductive load. For capacitive load, derate current by 20%. 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.003(0.08) 0.006(0.15) 0.110(2.80) 0.019(2.00) 0.071(1.80) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 2006-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted ) CHARACTERISTICS SYMBOL UNITS V V V Marking G11 0.055(1.40) 0.047(1.20) BASE EMITTER COLLECTOR 1 1 2 3 2 3 DC current gain (VCE= 10V, IC= 7mA) Collector cut-off current (VCB= 20V, IE=0) Collector cut-off current (VCE= 15V, IC=0) Collector cut-off current (VEB= 4V, IC=0) Transition frequency (VCE= 10V, IC= 5mA, f=100MHZ) Collector-emitter saturation voltage (IC= 10mA, IB= 1mA) Base - emitter voltage (IC= 7mA, VCE= 10V) 0.9 - - MHz m A m A m A V V Collector-base breakdown voltage (IC= 100mA, IE=0) Collector-emitter breakdown voltage (IC= 100mA, IB=0) Emitter-base breakdown voltage (IE= 100mA, IC=0) V(BR)CBO V(BR)CEO V(BR)EBO ICEO IEBO hFE ICBO VCE(sat) VBE(on) fT MAX - 275 - 0.1 - - 0.1 0.1 120 0.3 MIN - - TYP - - - - - - - - 30 20 4 - 40 - - - * Power dissipation PCM : 0.25 W (Tamb=25OC) * Collector current ICM : 0.025 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)". |
类似零件编号 - BFS20 |
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类似说明 - BFS20 |
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