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MMBTA13 数据表(PDF) 2 Page - Rectron Semiconductor |
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MMBTA13 数据表(HTML) 2 Page - Rectron Semiconductor |
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2 / 6 page ![]() ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS(1) SMALL-SIGNAL CHARACTERISTICS Chatacteristic Collector-Emitter Breakdown Voltage (IC= 100uAdc, VBE= 0) Collector Cutoff Current (VCB= 30Vdc, IE= 0) Emitter Cutoff Current (VEB= 10Vdc, IC= 0) DC Current Gain (IC= 10mAdc, VCE= 5.0Vdc) Collector-Emitter Saturation Voltage (IC= 100mAdc, IB= 0.1mAdc) (IC= 100mAdc, VCE= 5.0Vdc) V(BR)CES 30 - Vdc ICBO - 100 nVdc IEBO - 100 nVdc Vdc fT 125 - MHz hFE - 1.5 - 10,000 - 5000 2.0 - - VCE(sat) Symbol Min Max Unit Base-Emitter On Voltage (IC= 100mAdc, VCE= 5.0Vdc) Current-Gain-Bandwidth Product (2) (IC= 10mAdc, VCE= 5.0Vdc, f= 100MHz) Vdc VBE Notes : 1. Pulse Test: Pulse Width<300ms,Duty Cycle<2.0% 2. fT = |hfe|.ftest - - |
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