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MMST4401 数据表(PDF) 2 Page - Rectron Semiconductor |
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MMST4401 数据表(HTML) 2 Page - Rectron Semiconductor |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) OFF CHARACTERISTICS (2) ON CHARACTERISTICS (2) SMALL-SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS Chatacteristic Collector-Emitter Breakdown Voltage (IC= 1.0mAdc, IB= 0) Collector-Base Breakdown Voltage (IC= 100µAdc, IE= 0) Emitter-Base Breakdown Voltage (IE= 100µAdc, IC= 0) Collector Cutoff Current (VCE= 35Vdc,IB=0) Collector Cutoff Current (VCB= 35Vdc, IE= 0) Emitter Cutoff Current (VEB= 5Vdc, IC= 0) Base Cutoff Current (VCE= 35Vdc, VEB(off)= 0.4Vdc DC Current Gain (IC= 0.1mAdc, VCE= 1.0Vdc) Collector-Emitter Saturation Voltage (IC= 150mAdc, IB= 15mAdc) (IC= 1.0mAdc, VCE= 1.0Vdc) (IC= 10mAdc, VCE= 1.0Vdc) (IC= 150mAdc, VCE= 1.0Vdc) (IC= 500mAdc, VCE= 2.0Vdc) V(BR)CEO 40 - Vdc V(BR)CBO 60 - Vdc V(BR)EBO 6.0 - Vdc ICEO ICBO IEBO IBL - 0.5 - - - 0.1 0.1 100 µAdc Vdc µAdc nAdc fT 250 hFE 40 20 - - 300 - - 50 100 40 - VCE(sat) - 0.40 - 0.75 µAdc Symbol Min Max Unit (IC= 500mAdc, IB= 50mAdc) Base-Emitter Saturation Voltage (IC= 150mAdc, IB= 15mAdc) Current-Gain-Bandwidth Product (IC= 20mAdc, VCE= 10Vdc, f= 100MHz) Ceb pF pF MHz td tr ts tf 1.0 30 µs - - - - ns ns hie k Ω hre - - 6.5 X 10-4 hfe - 30 1.0 15 - hoe 0.1 8.0 40 500 225 30 15 20 Input Capacitance (VEB= 0.5Vdc, IC= 0, f= 1.0MHz) Cob Output Capacitance (VCB= 5Vdc, IE= 0, f= 1.0MHz) Input Impedance (IC= 1.0mAdc, VCE=10Vdc, f=1.0kHz) Voltage Feedback Ratio (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz) Small-Signal Current Gain (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz) Output Admittance (IC= 10mAdc, VCE= 10Vdc, f= 1.0kHz) (VCC= 30Vdc, VBE= 2Vdc, IC= 150mAdc, IB1= 15mAdc) (VCC= 30Vdc, IC= 150mAdc, IB1= IB2= 15mAdc) Vdc VBE(sat) - 0.95 - - (IC= 500mAdc, IB= 50mAdc) Delay Time Rise Time Storage Time Fall Time RECTRON NOTES : 2. Pulse Test: Pulse Width<300 µs,Duty Cycle<2.0% - - |
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