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MMST4403 数据表(PDF) 2 Page - Rectron Semiconductor |
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MMST4403 数据表(HTML) 2 Page - Rectron Semiconductor |
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2 / 3 page ![]() ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) OFF CHARACTERISTICS (2) ON CHARACTERISTICS (2) SMALL-SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS Chatacteristic Collector-Emitter Breakdown Voltage (IC= -1.0mAdc, IB= 0) Collector-Base Breakdown Voltage (IC= -100µAdc, IE= 0) Emitter-Base Breakdown Voltage (IE= -100µAdc, IC= 0) Collector Cutoff Current (VCE= -35Vdc,IB=0) Collector Cutoff Current (VCB= -35Vdc, IE= 0) Emitter Cutoff Current (VEB= -4Vdc, IC= 0) Base Cutoff Current (VCE= -35Vdc, VEB(off)= -0.4Vdc DC Current Gain (IC= -100µAdc, VCE= -1.0Vdc) Collector-Emitter Saturation Voltage (IC= -150mAdc, IB= -15mAdc) (IC= -1.0mAdc, VCE= -1.0Vdc) (IC= -10mAdc, VCE= -1.0Vdc) (IC= -150mAdc, VCE= -2.0Vdc) (IC= -500mAdc, VCE= -2.0Vdc) V(BR)CEO -40 - Vdc V(BR)CBO -40 - Vdc V(BR)EBO -5.0 - Vdc ICEO ICBO IEBO IBL - -0.1 - - - -0.1 -0.1 -100 µAdc Vdc µAdc nAdc fT 200 hFE 60 30 - - 300 - - 100 100 30 - VCE(sat) - -0.40 - -0.75 µAdc Symbol Min Max Unit (IC= -500mAdc, IB= -50mAdc) Base-Emitter Saturation Voltage (IC= -150mAdc, IB= -15mAdc) Current-Gain-Bandwidth Product (IC= -10mAdc, VCE= -20Vdc, f= 1.0kHz) Cebo pF pF MHz td tr ts tf 1.0 100 µs - - - - ns ns hie k Ω hre - - 8.5 X 10-4 hfe - 30 1.5 15 - hoe 0.1 8.0 60 400 225 30 15 20 Input Capacitance (VEB=-0.5Vdc, IC= 0, f= 1.0MHz) Cobo Output Capacitance (VCB=-10Vdc, IE= 0, f= 1.0MHz) Input Impedance (IC= 1.0mAdc, VCE=10Vdc, f=1.0kHz) Voltage Feedback Ratio (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz) Small-Signal Current Gain (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz) Output Admittance (IC= 10mAdc, VCE= 10Vdc, f= 1.0kHz) (VCC= -30Vdc, VBE= -2.0Vdc, IC= -150mAdc, IB1= -15mAdc) (VCC= -30Vdc, IC= -150mAdc, IB1= IB2= -15mAdc) Vdc VBE(sat) -0.75 -0.95 - -1.30 (IC= -500mAdc, IB= -50mAdc) Delay Time Rise Time Storage Time Fall Time RECTRON NOTES : 2. Pulse Test: Pulse Width<300 µs,Duty Cycle<2.0% - - |
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