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MMST5401 数据表(PDF) 2 Page - Rectron Semiconductor |
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MMST5401 数据表(HTML) 2 Page - Rectron Semiconductor |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) OFF CHARACTERISTICS (2) ON CHARACTERISTICS (2) SMALL-SIGNAL CHARACTERISTICS Chatacteristic Collector-Emitter Breakdown Voltage (IC= -1.0mAdc, IB= 0) Collector-Base Breakdown Voltage (IC= -100µAdc, IE= 0) Emitter-Base Breakdown Voltage (IE= -10µAdc, IC= 0) Collector Cutoff Current (VCB= -120Vdc, IE= 0) Emitter Cutoff Current (VEB= -3.0Vdc, IC= 0) DC Current Gain (IC= -1mAdc, VCE= -5Vdc) Collector-Emitter Saturation Voltage (IC= -10mAdc, IB= -1mAdc) (IC= -10mAdc, VCE= -5Vdc) (IC= -50mAdc, VCE= -5Vdc) V(BR)CEO -150 - Vdc V(BR)CBO -160 - Vdc V(BR)EBO -5 - Vdc ICBO IEBO - - -50 -50 Vdc nAdc fT 100 hFE 60 50 240 - - 50 - VCE(sat) - -0.2 - -0.5 nAdc Symbol Min Max Unit (IC= -50mAdc, IB= -5mAdc) Base-Emitter Saturation Voltage (IC= -10mAdc, IB= -1mAdc) Current-Gain-Bandwidth Product (IC= -10mAdc, VCE= -10Vdc, f= 100MHz) pF MHz 300 - 6 40 200 - 8 hfe dB - NF Cob Output Capacitance (VCB= -10Vdc, IE= 0, f= 1.0MHz) Small-Signal Current Gain (IC= -1.0mAdc, VCE= -10Vdc, f= 1.0kHz) Noise figure (IC= -0.2mAdc, VCE= -5Vdc, f= 1.0kHz,Rg=10Ω) Vdc VBE(sat) - -1 - -1 (IC= -50mAdc, IB= -5mAdc) RECTRON NOTES : 2. Pulse Test: Pulse Width<300 µs,Duty Cycle<2.0% - - |
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