MBR1030CT-MBR1060CT

Schottky Barrier Recitifier

PRODUCT SUMMARY

TO-220 Plastic-Encapsulate Transistors

FEATURES

Scottky Barrier Chip

Guard Ring Die Construction for Transient Protection

Low Power Loss, High Efficiency

Very low forward voltage drop

High Surge Capability

High Current Capability and Low Forward Voltage Drop

For use in low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Applications

01/29/2007 Rev.1.00

www.SiliconStandard.com

1

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

30

35

40

45

50

60

V

PMS Reverse Voltage

21

24.5

28

31.5

35

42

V

Average Rectified Output Current

(Note

1)

℃

10

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load

(JEDEC Method)

125

A

Repetitive Peak Reverse Surge Current

@ t

≤ 2.0µs

1.0

A

Forward Voltage Drop

℃

℃

℃

0.57

0.70

0.84

0.70

0.80

0.95

V

Peak Reverse Current

℃

at Rated DC Blocking Voltage

℃

0.1

15

mA

Typical Junction Capacitance (Note 2)

150

pF

Operating and Storage Temperature Range

-65 to +150

℃

Characteristic

Symbol

MBR

1030CT

MBR

1035CT

MBR

1040CT

MBR

1045CT

MBR

1050CT

MBR

1060CT

Unit

ELECTRICAL CHARACTERISTICS

Pb-free; RoHS-compliant

Notes: 1. Thermal resistance junction to case mounted heat sink.

2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC.

1 2 3

TO-220

1

2. CATHODE

3. ANODE

1

2

3