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SS6341 数据表(PDF) 12 Page - Silicon Standard Corp. |
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SS6341 数据表(HTML) 12 Page - Silicon Standard Corp. |
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12 / 14 page ![]() www.SiliconStandard.com 12 of 14 SS6341 even if the same device type is used for both. This is because the gate drive applied to the upper MOSFET is different than the lower MOSFET. Logic level MOSFETs should be selected based on on-resistance considerations. RDS(ON) should be chosen based on input and output voltage, allowable power dissipation and maximum required output current. Power dissipation should be calculated based primarily on required efficiency or allowable thermal dissipation. A Schottky diode is used as a clamp to prevent the parasitic MOSFET body diode from conducting during the dead time between the turn off of the lower MOSFET and the turn on of the upper MOSFET. The diode’s rated reverse breakdown voltage must be greater than twice the maximum input voltage. Linear Controller MOSFET Selection The power dissipated in a linear regulator is : ) V (V I P OUT IN2 OUT LINEAR − × = Select a package and heatsink that maintains junction temperature below the maximum rating while operating at the highest expected ambient temperature. Linear Output Capacitor The output capacitors for the linear controller provide dynamic load current. The linear controller uses dominant pole compensation integrated in the error amplifier and is insensitive to output capacitor selection. COUT2 and COUT3 should be selected for transient load regulation. Notes VOUT1 - The PWM output VOUT2 - The output of the linear controller managed by FB2 and GATE2 VOUT3 - The output of the linear controller managed by FB3 and GATE3 These refer to the TYPICAL APPLICATION CIRCUITS on pages 3 and 14. Rev.2.01 6/26/2003 |
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