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HFS830 数据表(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS830 数据表(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,Dec 2005 ※ Note : 1. VDS=40V 2. 250㎲ Pulse Test 150℃ 25℃ -55℃ 101 100 10-1 2 4 6 8 10 V GS, Gate-Source Voltage [V] V DS, Drain-Source Voltage [V] 101 100 10-1 10-1 100 101 ※ Note : 1. 250㎲ Pulse Test 2. TC=25℃ V Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottem 5.0V V SD, Source-Drain Voltage [V] ※ Note : 1. VGS=0V 2. 250㎲ Pulse Test 150℃ 25℃ 0.2 0.4 0.6 0.8 1.0 1.2 1.4 101 100 10-1 I D, Drain Current [A] 6 4 3 2 1 0 0 3 6 9 12 15 V GS=20V V GS=10V ※ Note : T J=25℃ Typical Characteristics 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 1400 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 0 4 8 12 16 20 0 2 4 6 8 10 12 V DS = 250V V DS = 100V V DS = 400V ∗ Note : I D = 4.5A Q G, Total Gate Charge [nC] |
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