◎ SEMIHOW REV.A0,Oct 2007

TIP100/101/102

CHARACTERISTICS

SYMBOL

RATING

UNIT

Collector-Base Voltage

: TIP100

: TIP101

: TIP102

V

CBO

60

80

100

V

V

V

Collector-Emitter Voltage : TIP100

: TIP101

: TIP102

V

CEO

60

80

100

V

V

V

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

Base Current

Collector Dissipation(Ta=25℃)

Collector Dissipation(Tc=25℃)

Junction Temperature

Storage Temperature

V

EBO

I

C

I

CP

I

B

P

C

P

C

T

J

T

STG

5

8

15

1

2

80

150

-65~150

V

A

A

A

W

W

℃

℃

CHARACTERISTICS

SYMBOL

Test Condition

Min

Max

Unit

Collector-Emitter Sustaining Voltage

: TIP100

: TIP101

: TIP102

V

I

60

80

100

V

V

V

Collector Cut-off Current

: TIP100

: TIP101

: TIP102

I

CEO

V

V

V

50

50

50

㎂

㎂

㎂

Collector Cut-off Current

: TIP100

: TIP101

: TIP102

I

CBO

V

V

V

50

50

50

㎂

㎂

㎂

Emitter Cut-off Current

I

EBO

V

2

㎃

DC Current Gain

h

FE

V

V

1000

200

20000

Collector-Emitter Saturation Voltage

V

I

I

2

2.5

V

V

Base-Emitter ON Voltage

V

V

2.8

V

Output Capacitance

C

ob

V

200

㎊

TO-220

1. Base

2. Collector

3. Emitter

1 2

3

Monolithic Construction With Built In

Base-Emitter Shunt Resistors

- High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)

- Collector-Emitter Sustaining Voltage

- Low Collector-Emitter Saturation Voltage

- Industrial Use

- Complementary to TIP105/106/107

NPN Epitaxial

Silicon Darlington

Transistor

Equivalent Circuit

* Pulse Test: PW

≤300us, Duty Cycle≤2%