SS8026 datasheet(2/12 Pages) SSC

2 / 12 page

www.SiliconStandard.com

2 of 12

Rev.2.02 12/06/2003

SS8026

Absolute Maximum Ratings

(Note 1)

Input Voltage………………...................................................................……………………..…..…7V

Power Dissipation Internally Limited…....................................................................

(Note 2)

Maximum Junction Temperature….......................................................……………............…..150°C

Storage Temperature Rang…........................................................................................-65°C

≤ T

≤+150°C

Lead Temperature, Time for Wave Soldering

SOT 223 Package……………….…….......................................................................………..260°C, 4s

Continuous Power Dissipation (TA = +25°C)

SOT 89

(1) ……………………......................................................................………………..….…0.5W

SOT 223

(1) ……………...................................................................………...……………….…....0.8W

TO 252

(1)

……………………….................................................................................................................………………………………………………….1.0W

Note

(1): See Recommended Minimum Footprint

Operating Conditions

(Note 1)

Input Voltage……………………........................................................................……………..2.7V~6.5V

Temperature Range…………..........................................................................................…0°C

≤ T

≤125°C

Electrical Characteristics

VIN =3.3V, IO = 1A, CIN = 1µF, COUT =10µF, All specifications apply for TA = TJ = 25°C. [Note 3]

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Output Voltage

10mA < IO < 1A

1.764

1.800

1.845

Line Regulation

3V < VIN < 6.5V, IO = 10mA

Load Regulation

10mA < IO < 1A

Output Impedance

200mA DC and 100mA AC, fo = 120Hz

Ω

Quiescent Current

VIN = 3.3V

480

µA

Ripple Rejection

fi = 120Hz,Vripple =1VP-P, Io = 100mA

IO = 0A

880

IO = 100mA

895

IO = 500mA

950

Dropout Voltage

IO = 1A

1160

VIN = 3V(SOT 223)

Minimum footprint

(0.0625 square inch)

660

VIN = 3.3V(SOT 223)

Mounted on 0.53

square inch pcb area

Output Current

Continuous Test,

TA = 25°C, TJ 150°C,

VOUT within ±2%

VIN = 3.3V(SOT 89)

Mounted on 0.16

square inch pcb area

0.5

Short Circuit Current

1.6

Over Temperature

150

°C

Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Conditions

are conditions under which the device functions but the specifications might not be guaranteed. For guaran-

teed specifications and test conditions see the Electrical Characteristics.

Note 2: The maximum power dissipation is a function of the maximum junction temperature, TJmax , total thermal re-

sistance,

JA, and ambient temperature TA. The maximum allowable power dissipation at any ambient te m-

perature is Tjmax-TA / θJA. If this dissipation is exceeded, tthe die temperature will rise above 150°C and the IC will

go into thermal shutdown. For the SS8026 in SOT 89 package,

JA is 250°C/W. For the SS8026 in SOT 223

package,

JA is 156°C/W; in TO 252 package, θJA is 125°C/W. (See recommend minimum footprint). The safe

operation in SOT 89, SOT 223, TO 252 package, can be seen in “Typical Performance Characteristics” (Safe

Operating Area).

Note3: Low duty pulse techniques are used during test to maintain junction temperatures as close to ambient as

possible.

Note4: The output capacitor should be a tantalum or aluminum type.

SS8026 数据表(PDF) 2 Page - Silicon Standard Corp.

SS8026 数据表(HTML) 2 Page - Silicon Standard Corp.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载