SSM4409GEM datasheet(4/5 Pages) SSC

部件名	SSM4409GEM

功能描述	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	5 Pages

Scroll/Zoom	100%

制造商	SSC [Silicon Standard Corp.]

网页	http://www.siliconstandard.com

标志

4 / 5 page

08/04/2007 Rev.1.00

www.SiliconStandard.com

SSM4409GEM

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

-4.5V

QGS

QGD

Charge

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

100

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja=125

oC/W

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

012345

-V GS , Gate-to-Source Voltage (V)

T j =150

o C

T j =25

o C

V DS =-5V

120

Q G , Total Gate Charge (nC)

I D = - 14A

V DS = - 30 V

0.01

0.1

100

0.1

100

-V DS , Drain-to-Source Voltage (V)

T A =25

o C

Single Pulse

1ms

10ms

100ms

100

1000

10000

131721

2529

-V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

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