SSM4532M datasheet(2/11 Pages) SSC

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SSM4532M

N-channel Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=1mA

0.037

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=5A

Ω

VGS=4.5V, ID=4.2A

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=5A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=30V, VGS=0V

Drain-Source Leakage Current (Tj=55

oC)

VDS=24V, VGS=0V

IGSS

Gate-Source Leakage

VGS=±20V

Total Gate Charge

ID=5A

10.2

Qgs

Gate-Source Charge

VDS=10V

1.2

Qgd

Gate-Drain ("Miller") Charge

VGS=10V

3.4

td(on)

Turn-on Delay Time

VDS=10V

Rise Time

ID=1A

td(off)

Turn-off Delay Time

RG=6Ω,VGS=10V

Fall Time

RD=10Ω

5.5

Ciss

Input Capacitance

VGS=0V

240

360

Coss

Output Capacitance

VDS=25V

145

210

Crss

Reverse Transfer Capacitance

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=1.2V

1.7

ISM

Pulsed Source Current ( Body Diode )

VSD

Forward On Voltage

Tj=25°C, IS=1.7A, VGS=0V

0.8

1.2

Notes:

1.Pulse width limited by max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on FR4 board, t<10sec.

4.Pulse width <10us , duty cycle <1%.

±100

Rev.2.01 7/01/2004

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