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SSM4565M 数据表(PDF) 2 Page - Silicon Standard Corp.

部件名 SSM4565M
功能描述  COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
PDF  8 Pages
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制造商  SSC [Silicon Standard Corp.]
网页  http://www.siliconstandard.com
标志 SSC - Silicon Standard Corp.

SSM4565M 数据表(HTML) 2 Page - Silicon Standard Corp.

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SSM4565M/GM
12/10/2004 Rev.2.01
N-channel Electrical Characteristics @ Tj=25
oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
-
V
∆BV
DSS/
∆Tj
Breakdown Voltage Temperature Coefficient
Reference to 25°C, ID=1mA
-
0.03
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=7A
-
-
25
m
Ω
VGS=4.5V, ID=5A
-
-
32
m
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
12
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=32V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
nA
Qg
Total Gate Charge
2
ID=7A
-
17
27
nC
Qgs
Gate-Source Charge
VDS=32V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
11
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=10V
-
30
-
ns
tf
Fall Time
RD=20Ω
-
11
-
ns
Ciss
Input Capacitance
VGS=0V
-
1400 2240
pF
Coss
Output Capacitance
VDS=25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=1.7A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
2
IS=7A, VGS=0V
-
26
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
21
-
nC
±100



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