SSM4920M datasheet(2/6 Pages) SSC

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SSM4920M

Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=1mA

0.037

-V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=7A

mΩ

VGS=4.5V, ID=5.2A

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=7A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=25V, VGS=0V

Drain-Source Leakage Current (Tj=55

oC)

VDS=20V, VGS=0V

IGSS

Gate-Source Leakage

VGS=±20V

Total Gate Charge

ID=7A

10.5

Qgs

Gate-Source Charge

VDS=15V

1.9

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

7.5

td(on)

Turn-on Delay Time

VDS=15V

Rise Time

ID=1A

9.5

td(off)

Turn-off Delay Time

RG=6Ω,VGS=10V

Fall Time

RD=15Ω

13.5

Ciss

Input Capacitance

VGS=0V

395

Coss

Output Capacitance

VDS=25V

260

Crss

Reverse Transfer Capacitance

f=1.0MHz

105

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=1.2V

2.1

ISM

Pulsed Source Current ( Body Diode )

VSD

Forward On Voltage

Tj=25℃, IS=2.1A, VGS=0V

0.8

1.2

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on FR4 board, t<10sec.

4.Pulse width <10us , duty cycle <1%.

±100

Rev.2.01 6/26/2003

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