SSM4957M datasheet(2/5 Pages) SSC

2 / 5 page

www.SiliconStandard.com

2 of 5

SSM4957(G)M

10/21/2004 Rev.1.01

Electrical Characteristics @ T j=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=-1mA

-0.02

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-7A

Ω

VGS=-4.5V, ID=-5A

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-3

gfs

Forward Transconductance

VDS=-10V, ID=-7A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-30V, VGS=0V

-1

Drain-Source Leakage Current (Tj=70

oC)

VDS=-24V, VGS=0V

-25

IGSS

Gate-Source Leakage

VGS=±20V

Total Gate Charge

ID=-7A

Qgs

Gate-Source Charge

VDS=-24V

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

td(on)

Turn-on Delay Time

VDS=-15V

Rise Time

ID=-1A

td(off)

Turn-off Delay Time

RG=3.3Ω , VGS=-10V

Fall Time

RD=15Ω

-25

Ciss

Input Capacitance

VGS=0V

1670

2670

Coss

Output Capacitance

VDS=-25V

530

Crss

Reverse Transfer Capacitance

f=1.0MHz

435

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

IS=-1.7A, VGS=0V

-1.2

Reverse Recovery Time

IS=-7A, VGS=0V,

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

Notes:

1.Pulse width limited by max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on 1 in

2 copper pad of FR4 board ; 135°C/W when mounted on min. copper pad.

±100

SSM4957M 数据表(PDF) 2 Page - Silicon Standard Corp.

SSM4957M 数据表(HTML) 2 Page - Silicon Standard Corp.

Html Pages

1 2 3 4 5

数据表下载