www.SiliconStandard.com

1 of 5

Dual N-channel Enhancement-mode Power MOSFETs

60V

50m

Ω

5A

The SSM9971GD acheives fast switching performance

with low gate charge without a complex drive circuit. It

is suitable for low voltage applications such as DC/DC

ABSOLUTE MAXIMUM RATINGS

W/°C

Symbol

Parameter

Value

Units

Maximum thermal resistance, junction-ambient

3

62.5

°C/W

Symbol

Parameter

Value

Units

Drain-source voltage

60

V

Gate-source voltage

Continuous drain current

3

,

5

A

3.2

A

Pulsed drain current

1,2

20

A

Operating junction temperature range

-55 to 150

°C

Linear derating factor

0.016

Storage temperature range

Total power dissipation

2

W

-55 to 150

°C

THERMAL CHARACTERISTICS

± 25

V

Pb-free; RoHS-compliant SO-8

PRODUCT SUMMARY

DESCRIPTION

Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

3.Mounted on a square inch of copper pad on FR4 board; 90°C/W when mounted on the minimum pad area required for soldering.

converters and general load-switching circuits.

The SSM2310GD is supplied in an RoHS-compliant

PDIP-8 package, which is widely used for medium power

commercial and industrial applications, where through-

hole insertion into the board is required.

S1

G1

S2

G2

D1

D1

D2

D2

PDIP-8

SSM9971GD

10/16/2005 Rev.3.1