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N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Low gate-charge

60V

Simple drive requirement

18m

Ω

Fast switching

60A

Description

G

D

S

G D

S

TO-263 (S)

G

D

S

TO-220(P)

The SSM9972GS is in a TO-263 package, which is widely used for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters. The through-hole

version, the SSM9972GP in TO-220, is available for low-footprint vertical

mounting. These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

Pb-free lead finish (second-level interconnect)

Absolute Maximum Ratings

Symbol

Units

V

W/°C

Symbol

Value

Units

Rthj-c

Thermal Resistance Junction-case

Max.

1.4

°C/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

62

°C/W

Parameter

Rating

Drain-Source Voltage

60

Gate-Source Voltage

±25

V

3

60

A

38

A

Pulsed Drain Current

1

230

A

Total Power Dissipation

89

W

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Linear Derating Factor

0.7

Thermal Data

Parameter

Storage Temperature Range

SSM9972GP,S

2/16/2005 Rev.1.1