SOT23 SILICON HIGH

SPEED SWITCHING DIODE

ISSUE 2 – JANUARY 1995

PIN CONFIGURATION

PARTMARKING DETAILS

BAS19 – A8

BAS20 – A81

BAS21 – A82

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

BAS19

BAS20

BAS21

UNIT

Continuous Reverse Voltage

100

150

200

V

Repetative Peak Reverse Voltage

120

200

250

V

Average Forward Rectified Current

200

mA

Forward Current

200

mA

Repetative Peak Forward Current

625

mA

330

mW

Operating and Storage Temperature

Range

-55 to +150

°C

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Reverse

Breakdown

Voltage

BAS19

120

V

BAS20

200

V

BAS21

250

V

Reverse Current

100

100

nA

µ

A

1.00

1.25

IF=100mA

5

Ω

Diode Capacitance

5pF

f=1MHz

50

ns

(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

(2) At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage

limited to 275V

Spice parameter data is available upon request for this device

BAS19

BAS20

BAS21

PAGE NO

1

3

2

SOT23

BAS19

BAS20

BAS21



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SWITCHING TIME TEST DATA

Sampling Oscilloscope

DUT

Pulse Generator

t

90%

10%

90%

V

Recovery Time Equivalent Test Circuit

Input Signal

Output Signal

Input Signal

Total Pulse Duration

Duty Factor

δ

0.0025

Rise Time of Reverse

Pulse

0.6ns

Reverse Pulse Duration

100ns

Oscilloscope

Rise Time

0.35ns

Circuit Capacitance*

C

<1pF