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FMMV3102 数据表(PDF) 1 Page - Zetex Semiconductors |
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FMMV3102 数据表(HTML) 1 Page - Zetex Semiconductors |
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1 / 1 page ![]() SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 3 – JANUARY 1998 PIN CONFIGURATION PARTMARKING DETAIL FMMV3102 – 4C ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown Voltage VBR 30 V IR = 10µA Reverse current IR 10 nA VR = 25V Series Inductance LS 3.0 nH f=250MHz Diode Capacitance Temperature Coefficient TCC 280 ppm/ °C VR = 3V, f=1MHz Case Capacitance CC 0.1 pF f=1MHz TUNING CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Diode Capacitance Cd 20 25 pF VR = 3V, f=1MHz Capacitance Ratio Cd / Cd 4.5 VR = 3V/25V, f=1MHz Figure of MERIT Q 200 300 VR = 3V, f=50MHz Spice parameter data is available upon request for this device FMMV3102 1 3 2 SOT23 1 3 |
类似零件编号 - FMMV3102 |
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类似说明 - FMMV3102 |
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