FZT591 datasheet(1/1 Pages) ZETEX

部件名	FZT591

功能描述	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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制造商	ZETEX [Zetex Semiconductors]

网页	http://www.diodes.com/

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SOT223 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 - NOVEMBER 1995

7

COMPLEMENTARY TYPE FZT491

PARTMARKING DETAIL - FZT591

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-60

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-2

A

Continuous Collector Current

IC

-1

A

Base Current

IB

-200

mA

Power Dissipation at Tamb=25°C

Ptot

2W

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL MIN.

MAX.

UNITCONDITIONS.

Breakdown Voltages

V(BR)CBO -80

V

IC=-100µA, IE=0

V(BR)CEO -60

V

IC=-10mA, IB=0*

V(BR)EBO -5

V

IE=-100µA, IC=0

Collector Cut-Off Current

ICBO

-100

nA VCB=-60V

Emitter Cut-Off Current

IEBO

-100

nA VEB=-4V, IC=0

Collector-Emitter Cut-Off Current

ICES

-100

nA VCES=-60V

Emitter Saturation Voltages

VCE(sat)

-0.3

-0.6

V

IC=-500mA,IB=-50mA*

IC=-1A, IB=-100mA*

VBE(sat)

-1.2

V

IC=-1A, IB=-100mA*

Base-Emitter Turn-on Voltage

VBE(on)

-1.0

V

IC=-1A, VCE=-5V*

Static Forward Current Transfer

Ratio

hFE

100

80

15

300

IC=-1mA, VCE=-5V*

IC=-500mA, VCE=-5V*

IC=-1A, VCE=-5V*

IC=-2A, VCE=-5V*

Transition Frequency

fT

150

MHz IC=-50mA, VCE=-10V

f=100MHz

Output Capacitance

Cobo

10

pF

VCB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical Characteristics graphs see FMMT591 datasheet

FZT591

3 - 195

C

E

B

类似零件编号 - FZT591

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类似说明 - FZT591

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