74HC_HCT3G34_5

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 05 — 7 May 2009

5 of 13

NXP Semiconductors

74HC3G34; 74HCT3G34

Triple buffer gate

[1]

11. Dynamic characteristics

74HCT3G34

HIGH-level input

voltage

2.0

1.6

-

2.0

-

V

LOW-level input

voltage

-

1.2

0.8

-

0.8

V

HIGH-level output

voltage

4.4

4.5

-

4.4

-

V

4.13

4.32

-

3.7

-

V

LOW-level output

voltage

-

0

0.1

-

0.1

V

-

0.15

0.33

-

0.4

V

input leakage current

-

-

±1.0

-

±1.0

µA

supply current

-

-

10

-

20

µA

additional supply

current

-

-

375

-

410

µA

input capacitance

-

1.5

-

-

-

pF

Table 7.

Voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C

Unit

Min

Max

Min

Max

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

74HC3G34

propagation delay nA to nY; see Figure 5

[2]

-

29

95

-

125

ns

-

9

19

-

25

ns

-

8

16

-

20

ns

transition time

nY; see Figure 5

[3]

-

18

95

-

125

ns

-

6

19

-

25

ns

-

5

16

-

20

ns

power dissipation

capacitance

[4]

-10-

-

-

pF