74HC366D datasheet(5/19 Pages) NXP

5 / 19 page

74HC_HCT366_3

Product data sheet

Rev. 03 — 21 November 2006

5 of 19

NXP Semiconductors

74HC366; 74HCT366

Hex buffer/line driver; 3-state; inverting

Static characteristics

rise time

inputs

VCC = 2.0 V

1000 ns

VCC = 4.5 V

6.0

500

VCC = 6.0 V

400

fall time

inputs

VCC = 2.0 V

1000 ns

VCC = 4.5 V

6.0

500

VCC = 6.0 V

400

74HCT366

VCC

supply voltage

4.5

5.0

5.5

input voltage

VCC

output voltage

VCC

Tamb

ambient temperature

−40

+25

+125

°C

rise time

inputs; VCC = 4.5 V

6.0

500

fall time

inputs; VCC = 4.5 V

6.0

500

Table 5.

Recommended operating conditions …continued

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Table 6.

Static characteristics 74HC366

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Tamb =25 °C

VIH

HIGH-level input voltage

VCC = 2.0 V

1.5

1.2

VCC = 4.5 V

3.15

2.4

VCC = 6.0 V

4.2

3.2

VIL

LOW-level input voltage

VCC = 2.0 V

0.8

0.5

VCC = 4.5 V

2.1

1.35

VCC = 6.0 V

2.8

1.8

VOH

HIGH-level output voltage VI = VIH or VIL

---

IO = −20 µA; VCC = 2.0 V

1.9

2.0

IO = −20 µA; VCC = 4.5 V

4.4

4.5

IO = −20 µA; VCC = 6.0 V

5.9

6.0

IO = −6.0 mA; VCC = 4.5 V

3.98

4.32

IO = −7.8 mA; VCC = 6.0 V

5.48

5.81

VOL

LOW-level output voltage

VI = VIH or VIL

IO =20 µA; VCC = 2.0 V

0.1

IO =20 µA; VCC = 4.5 V

0.1

IO =20 µA; VCC = 6.0 V

0.1

IO = 6.0 mA; VCC = 4.5 V

0.15

0.26

IO = 7.8 mA; VCC = 6.0 V

0.16

0.26

input leakage current

VI =VCC or GND; VCC = 6.0 V

±0.1 µA

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