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HAL710 数据表(PDF) 2 Page - Micronas |
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HAL710 数据表(HTML) 2 Page - Micronas |
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2 / 2 page ![]() PRODUCT INFORMATION HAL 710/730 May/2007 All information and data contained in this product information are without any commitment, are not to be consid- ered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Product or development sample availability and delivery are exclusively subject to our respective order confirmation form. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Micronas GmbH ⋅ Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg (Germany) ⋅ P.O. Box 840 ⋅ D-79008 Freiburg (Germany) Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ www.micronas.com No part of this publication may be reproduced, photo- copied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. Edition May 7, 2007; Order No. PI000115-001EN Available Types and Switching Behavior Type Direction Output: Definition of Output State HAL 710 Output high, when edge of comparator 1 precedes edge of comparator 2 HAL 730 Output high, when edge of comparator 2 precedes edge of comparator 1 System Architecture The Hall-effect sensor is a monolithic inte- grated circuit that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreas- ing induction of magnets at higher tempera- tures. If the magnetic field exceeds the threshold levels, the open-drain output switches to the appropriate state. The built- in hysteresis eliminates oscillation and pro- vides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sam- pled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and com- pared with the actual switching point. Reverse Voltage and Overvoltage Protection Temperature Dependent Bias Hysteresis Control Hall Plate 1 Switch Comparator 1 VDD Hall Plate 2 Switch Comparator Clock Output 3 Count Output Direction Output 2 Direction Output Short Circuit and Overvoltage Protection Test-Mode Control S1 S2 Detection GND 4 Fig. 1: Block diagram of the HAL 710/730 |
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