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HAL710 数据表(PDF) 2 Page - Micronas

部件名 HAL710
功能描述  Hall-Effect Sensors with Direction Detection
PDF  2 Pages
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制造商  MICRONAS [Micronas]
网页  http://www.micronas.com
标志 MICRONAS - Micronas

HAL710 数据表(HTML) 2 Page - Micronas

  HAL710_2 Datasheet HTML 1Page - Micronas HAL710_2 Datasheet HTML 2Page - Micronas  
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PRODUCT INFORMATION
HAL 710/730
May/2007
All information and data contained in this product information are without any commitment, are not to be consid-
ered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Product or
development sample availability and delivery are exclusively subject to our respective order confirmation form. By
this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third
parties which may result from its use.
Micronas GmbH
⋅ Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg (Germany) ⋅ P.O. Box 840 ⋅ D-79008 Freiburg (Germany)
Tel. +49-761-517-0
⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ www.micronas.com
No part of this publication may be reproduced, photo-
copied, stored on a retrieval system, or transmitted
without the express written consent of Micronas GmbH.
Edition May 7, 2007; Order No. PI000115-001EN
Available Types and Switching Behavior
Type
Direction Output: Definition of Output State
HAL 710
Output high, when edge of comparator 1 precedes
edge of comparator 2
HAL 730
Output high, when edge of comparator 2 precedes
edge of comparator 1
System Architecture
The Hall-effect sensor is a monolithic inte-
grated circuit that switches in response to
magnetic fields. If a magnetic field with flux
lines perpendicular to the sensitive area is
applied to the sensor, the biased Hall plate
forces a Hall voltage proportional to this
field. The Hall voltage is compared with the
actual threshold level in the comparator.
The temperature-dependent bias increases
the supply voltage of the Hall plates and
adjusts the switching points to the decreas-
ing induction of magnets at higher tempera-
tures. If the magnetic field exceeds the
threshold levels, the open-drain output
switches to the appropriate state. The built-
in hysteresis eliminates oscillation and pro-
vides switching behavior of output without
bouncing.
Magnetic offset caused by mechanical
stress is compensated for by using the
“switching offset compensation technique”.
Therefore, an internal oscillator provides a
two phase clock. The Hall voltage is sam-
pled at the end of the first phase. At the end
of the second phase, both sampled and
actual Hall voltages are averaged and com-
pared with the actual switching point.
Reverse
Voltage and
Overvoltage
Protection
Temperature
Dependent
Bias
Hysteresis
Control
Hall Plate 1
Switch
Comparator
1
VDD
Hall Plate 2
Switch
Comparator
Clock
Output
3
Count Output
Direction
Output
2
Direction Output
Short Circuit
and
Overvoltage
Protection
Test-Mode
Control
S1
S2
Detection
GND
4
Fig. 1: Block diagram of the HAL 710/730



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