BAP64LX datasheet(3/8 Pages) NXP

3 / 8 page

BAP64LX_1

Product data sheet

Rev. 01 — 29 June 2007

3 of 8

NXP Semiconductors

BAP64LX

Silicon PIN diode

Lins

insertion loss

see Figure 4;IF = 0.5 mA;

f = 900 MHz

1.22

f = 1800 MHz

1.21

f = 2450 MHz

1.22

Lins

insertion loss

see Figure 4;IF = 1 mA;

f = 900 MHz

0.22

f = 1800 MHz

0.23

f = 2450 MHz

0.24

Lins

insertion loss

see Figure 4;IF =10mA;

f = 900 MHz

0.12

f = 1800 MHz

0.14

f = 2450 MHz

0.15

Lins

insertion loss

see Figure 4;IF = 100 mA;

f = 900 MHz

0.09

f = 1800 MHz

0.10

f = 2450 MHz

0.11

τL

charge carrier life time

when switched from IF = 10 mA to

IR = 6 mA; RL = 100 Ω; measured at

IR =3mA

1.0

µs

series inductance

IF = 100 mA; f = 100 MHz

0.4

Table 6.

Characteristics …continued

Tamb = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

f = 1 MHz; Tj =25 °C.

f = 100 MHz; Tj =25 °C.

Fig 1.

Diode capacitance as a function of reverse

voltage; typical values

Fig 2.

Forward resistance as a function of forward

current; typical values

001aag637

VR (V)

020

812

200

300

100

400

500

(fF)

001aag638

IF (mA)

10−1

102

(

Ω)

10−1

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