2003 Mar 20

2

NXP Semiconductors

Product data sheet

General purpose controlled avalanche

(double) diodes

BAS29; BAS31; BAS35

FEATURES

• Small plastic SMD package

• Switching speed: max. 50 ns

• General application

• Continuous reverse voltage: max. 90 V

• Repetitive peak reverse voltage: max. 110 V

• Repetitive peak forward current: max. 600 mA

• Repetitive peak reverse current: max. 600 mA.

APPLICATIONS

• General purpose switching in e.g. surface mounted

circuits.

DESCRIPTION

General purpose switching diodes fabricated in planar

technology, and encapsulated in small rectangular plastic

SMD SOT23 packages. The BAS29 consists of a single

diode. The BAS31 has two diodes in series. The BAS35

has two diodes with a common anode.

MARKING

Note

1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

∗ = W : Made in China.

PINNING

TYPE NUMBER

MARKING CODE(1)

BAS29

L20 or

∗A8

BAS31

L21 or

∗V1

BAS35

L22 or

∗V2

PIN

DESCRIPTION

BAS29

BAS31

BAS35

1

anode

anode

cathode (k1)

2

not connected cathode

cathode (k2)

3

cathode

common

connection

common

anode

handbook, halfpage

21

3

a. Simplified outline.

c. BAS31 diode.

b. BAS29 diode.

d. BAS35 diode.

MAM233

1

2

3

1

2

3

1

2

n.c.

3

Fig.1 Simplified outline (SOT23) and symbols.