2003 Dec 12

2

NXP Semiconductors

Product data sheet

Low-leakage diode

BAS116

FEATURES

• Plastic SMD package

• Low leakage current: typ. 3 pA

• Switching time: typ. 0.8 µs

• Continuous reverse voltage: max. 75 V

• Repetitive peak reverse voltage: max. 85 V

• Repetitive peak forward current: max. 500 mA.

APPLICATION

• Low leakage current applications in surface mounted

circuits.

DESCRIPTION

Epitaxial medium-speed switching diode with a low

leakage current in a small SOT23 plastic SMD package.

PINNING

PIN

DESCRIPTION

1

anode

2

not connected

3

cathode

lumns

21

3

Top view

MAM106

2

n.c.

1

3

Fig.1

Simplified outline (SOT23) and symbol.

Marking code:

JVp = made in Hong Kong;

JVt = made in Malaysia;

JVW = Made in China.

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Device mounted on an FR4 printed-circuit board.

TYPE NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

BAS116

−

plastic surface mounted package; 3 leads

SOT23

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

−

85

V

continuous reverse voltage

−

75

V

continuous forward current

see Fig.2; note 1

−

215

mA

repetitive peak forward current

−

500

mA

non-repetitive peak forward current

see Fig.4

−

4

A

−

1

A

−

0.5

A

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C