2004 Jan 26

5

NXP Semiconductors

Product data sheet

Low-leakage diode

BAS416

handbook, halfpage

150

200

50

0

MLB754

100

10

1

I R

(nA)

T ( C)

o

j

(1)

(2)

Fig.5

Reverse current as a function of

junction temperature.

(1) Maximum values.

(2) Typical values.

handbook, halfpage

010

20

15

5

2

0

1

MBG526

VR (V)

Cd

(pF)

Fig.6

Diode capacitance as a function

of reverse voltage; typical values.

Fig.7 Reverse recovery voltage test circuit and waveforms.

handbook, full pagewidth

t rr

(1)

I F

t

output signal

t r

t

t p

10%

90%

VR

input signal

V = V

I x R

RF

S

R = 50

S

Ω

IF

D.U.T.

R = 50

i

Ω

SAMPLING

OSCILLOSCOPE

MGA881