2001 Oct 12

2

NXP Semiconductors

Product data sheet

Low-leakage double diode

BAV199

FEATURES

• Plastic SMD package

• Low leakage current: typ. 3 pA

• Switching time: typ. 0.8 µs

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 500 mA.

APPLICATION

• Low-leakage current applications in

surface mounted circuits.

DESCRIPTION

Epitaxial, medium-speed switching,

double diode in a small SOT23 plastic

SMD package. The diodes are

connected in series.

MARKING

Note

1.

∗ = p: Made in Hong Kong.

∗ = t: Made in Malaysia.

∗ = W: Made in China.

TYPE NUMBER

MARKING

CODE(1)

BAV199

JY

∗

PINNING

PIN

DESCRIPTION

1

anode

2

cathode

3

anode; cathode

Fig.1 Simplified outline (SOT23) and symbol.

handbook, 4 columns

21

3

Top view

MAM107

21

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Device mounted on a FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

repetitive peak reverse voltage

−

85

V

continuous reverse voltage

−

75

V

continuous forward current

single diode loaded; note 1; see Fig.2

−

160

mA

double diode loaded; note 1; see Fig.2

−

140

mA

repetitive peak forward current

−

500

mA

non-repetitive peak forward

current

see Fig.4

−

4

A

−

1

A

−

0.5

A

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C