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BAW56 数据表(PDF) 13 Page - NXP Semiconductors

部件名 BAW56
功能描述  High-speed switching diodes
PDF  15 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

BAW56 数据表(HTML) 13 Page - NXP Semiconductors

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BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
13 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAV756S_BAW56_SER_5 20071126
Product data sheet
-
BAV756S_2
BAW56_4
BAW56S_2
BAW56T_2
BAW56W_4
Modifications:
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BAW56M added
• Section 1.1 “General description”: amended
• Table 1 “Product overview”: added
• Table 2 “Quick reference data”: added
• Table 6 “Limiting values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of VRRM maximum value from 85 V to 90 V
• Table 6 “Limiting values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of VR maximum value from 75 V to 90 V
• Table 8 “Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of IR condition VR from 75 V to 80 V for Tj =25 °C
• Table 8 “Characteristics”: for BAV756S change of IR maximum value from 2.5 µAto0.5 µA
for Tj =25 °C
• Table 8 “Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of
IR maximum value from 1 µA to 0.5 µA for Tj =25 °C
• Table 8 “Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of IR condition VR from 75 V to 80 V for Tj = 150 °C
• Table 8 “Characteristics”: for BAV756S change of IR maximum value from 60 µA to 30 µA
for IR condition VR =25V; Tj = 150 °C
• Table 8 “Characteristics”: for BAV756S change of IR maximum value from 100 µA to
150
µA for T
j = 150 °C
• Table 8 “Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of
IR maximum value from 50 µA to 150 µA for Tj = 150 °C
• Section 8 “Test information”: added
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
BAV756S_2
19971021
Product specification
-
BAV756S_1
BAW56_4
20030325
Product specification
-
BAW56_3
BAW56S_2
19971021
Product specification
-
BAW56S_1
BAW56T_2
19971219
Product specification
-
-
BAW56W_4
19990511
Product specification
-
BAW56W_3



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