BC337 datasheet(6/19 Pages) NXP

6 / 19 page

BC817_BC817W_BC337_6

Product data sheet

Rev. 06 — 17 November 2009

6 of 19

NXP Semiconductors

BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

VCE = 1 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

VCE = 1 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 1.

Selection -16: DC current gain as a function of

collector current; typical values

Fig 2.

Selection -25: DC current gain as a function of

collector current; typical values

VCE = 1 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 3.

Selection -40: DC current gain as a function of collector current; typical values

006aaa131

200

100

300

400

hFE

IC (mA)

10−1

103

102

110

(1)

(2)

(3)

006aaa132

400

200

600

hFE

IC (mA)

10−1

103

102

110

(1)

(2)

(3)

006aaa133

400

200

600

800

hFE

IC (mA)

10−1

103

102

110

(1)

(2)

(3)

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