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PD85004 数据表(PDF) 1 Page - STMicroelectronics |
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PD85004 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() August 2008 Rev 2 1/18 18 PD85004 RF power transistor the LdmoST plastic family Features ■ Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 4 W with 17 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel ■ In compliance with the 2002/95/EC european directive Description The PD85004 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85004’s superior gain and efficiency makes it an ideal solution for mobile radio. Figure 1. Pin connection SOT-89 Source Gate Source Drain Table 1. Device summary Order code Marking Package Packaging PD85004 8504 SOT-89 Tape and reel www.st.com |
类似零件编号 - PD85004 |
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类似说明 - PD85004 |
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