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ACST830-8FPTR 数据表(PDF) 2 Page - STMicroelectronics |
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ACST830-8FPTR 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 13 page ![]() Characteristics ACST8 2/13 Doc ID 7463 Rev 7 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit IT(RMS) On-state rms current (full sine wave) TO-220FPAB Tcase = 91 °C 8A TO-220AB / D2PAK Tcase = 105 °C D2PAK with 1cm2 Cu Tamb = 43 °C 2 A ITSM Non repetitive surge peak on-state current Tj initial = 25 °C, full cycle sine wave F = 50 Hz tp = 20 ms 80 A F = 60 Hz tp = 16.7 ms 84 A I2t Thermal constraint for fuse selection tp = 10 ms 42 A2s dI/dt Non repetitive on-state current critical rate of rise IG = 10 mA (tr < 100 ns) Rate period > 1 mn 100 A/µs VPP (1) Non repetitive line peak pulse voltage Tj = 25 °C 2 kV PG(AV) Average gate power dissipation Tj = 125 °C 0.1 W PGM Peak gate power dissipation (tp = 20 ms) Tj = 125 °C 10 W IGM Peak gate current (tp = 20 ms) Tj = 125 °C 1.6 A Tstg Storage temperature range - 40 to + 150 °C Tj Operating junction temperature range - 40 to + 125 °C Tl Maximum lead soldering temperature during 10 s 260 °C VINS(RMS) Insulation rms voltage TO-220FPAB 1500 V 1. According to test described in IEC 61000-4-5 standard and Figure 18. Table 3. Electrical characteristics per switch Symbol Test conditions Quadrant Tj Value Unit IGT (1) VOUT = 12 V, RL = 33 Ω I - II - III 25 °C Max 30 mA VGT VOUT = 12V, RL = 33 Ω I - II - III 25 °C Max 1.0 V VGD VOUT = VDRM, RL = 3.3 kΩ I - II - III 125 °C Min 0.2 V IH (2) IOUT = 500 mA 25 °C Max 30 mA IL IG = 1.2 x IGT I - II - III 25 °C Max 50 mA dV/dt(2) VOUT = 67% VDRM, gate open 125 °C Min 2000 V/µs (dI/dt)c(2) Without snubber 125 °C Min 8 A/ms VCL ICL = 0.1 mA, tp = 1 ms 25 °C Min 850 V 1. Minimum IGT is guaranteed at 5% of IGT(Max) 2. For either positive or negative polarity of OUT pin with reference to COM pin |
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